
Effect of grid and bias on the characteristic of CHF3 electron cyclot ron resonance discharge plasma
Author(s) -
Chao Ye,
Du Wang,
Ning Zhao-Yuan,
Cheng Shan-Hua
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1802
Subject(s) - electron cyclotron resonance , plasma , atomic physics , materials science , microwave , electron , biasing , electron temperature , spectroscopy , plasma diagnostics , plasma parameters , analytical chemistry (journal) , chemistry , voltage , physics , chromatography , quantum mechanics
The characteristics of CHF3 electron cyclotron resonance(ECR) plasma, which is formed in the case of a floating grid in an ECR-chemical vapor deposition system and +60V or -60V biased at grid, were investigated by an actinometric optical emission spectroscopy. It is found that the effects of grid and biasing on the distribution of radicals occur mainly at a low microwave input power. It is considered that the distribution of radicals at a low power is controlled by ele ctron collision and sheath potential together due to low electron temperature. H owever, the effect of sheath potential at a high power decreases due to increasi ng electron temperature. As a result, the distribution of radicals at a high pow er is dominated by electron collision.