Open AccessThe effect of annealing on the field emission properties of amorphous CNx films
Author(s) -
Junjie Li,
Weitao Zheng,
Bian Hai-Jiao,
Xin Lu,
Zhigang Jiang,
Yang Bai,
Zengsun Jin,
Yang Zhao
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1797
Subject(s) - materials science , field electron emission , x ray photoelectron spectroscopy , carbon nitride , annealing (glass) , amorphous solid , chemical bond , nitride , amorphous carbon , analytical chemistry (journal) , fourier transform infrared spectroscopy , carbon film , sputtering , sputter deposition , chemical engineering , thin film , nanotechnology , electron , crystallography , composite material , chemistry , engineering , layer (electronics) , quantum mechanics , photocatalysis , catalysis , physics , organic chemistry , biochemistry , chromatography
The carbon nitride films deposited by r.f. magnetron sputtering in pure N2 discharge were annealed in vacuum up to 900 ℃. The chemical composition and bonding structure of the films were studied using x-ray photoelectron spectroscopy, Fourier Transform Infrared. The effects of thermal annealing on the bonding structure and the electron field emission characteristics of CNx films wer e investigated. It is found that the sp2 bonds and N content in CNx films are closely related to the filed emission of CNx films. The results show that thermal annealing treatment causes a great loss of N content and a larger formation of sp2 bonds in CNx films, which would influence sign ificantly the field emission properties for the CNx films. The CNx films annealed at 750 ℃ show the optimal electron emission properties. Besides, the correlation between the chemical bonding structures and electron emission properties for the CNx films was also discussed.