Structural properties of GaN1-xPx films | Zendy

Dunjun Chen | Zendy; Bo Shen | Zendy; Kaixiao Zhang | Zendy; Deng Yong-Zhen | Zendy; Jie Fan | Zendy; Zhang Rong | Zendy; Yi Shi | Zendy; Zheng You-Dou | Zendy

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Structural properties of GaN1-xPx films

Author(s) -

Dunjun Chen,

Bo Shen,

Kaixiao Zhang,

Deng Yong-Zhen,

Jie Fan,

Zhang Rong,

Yi Shi,

Zheng You-Dou

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

ISSN - 1000-3290

DOI - 10.7498/aps.52.1788

Subject(s) - raman spectroscopy , materials science , molecular vibration , chemical vapor deposition , analytical chemistry (journal) , diffraction , raman scattering , phosphorus , bond length , spectral line , crystallography , optics , crystal structure , physics , chemistry , nanotechnology , chromatography , astronomy , metallurgy

X-ray diffraction (XRD) and Raman spectra for a series of high-phosphorus-content GaN1-xPx films, with phosphorus content up to 15%, gr own by means of light-radiation heating, low-pressure metal-organic chemical vapor deposition have been investigated. XRD results show that (0002) peaks of GaN1-xPx samples have shifted to smaller angles compared with t hat of undoped GaN sample. The Raman spectra of GaN1-xPx films exh ibit four new vibrational modes compared with undoped GaN sample. These modes are assigned to gap modes related to the Ga—P bond vibrations, local vibrational mode related to the phosphorus clusters, and disorder-activated scattering, respectively. The frequency of the A1(LO) mode is found to decrease with incre asing x. This redshift is attributed to the effects of alloying and strain.

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