Open AccessInflunce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures
Author(s) -
Kong Yue-Chan,
Youdou Zheng,
Chu Rongming,
Shulin Gu
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1756
Subject(s) - heterojunction , materials science , property (philosophy) , content (measure theory) , electron , fermi gas , optoelectronics , physics , quantum mechanics , mathematical analysis , philosophy , mathematics , epistemology
By self-consistently sovling the coupled Schrdinger and Poisson equations, we have investingated the property of the two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN heterostructures. We demonstrate the depen dence of the density, the distribution, and the subband occupation of the 2DEG on the Al-content of the AlGaN barrier. Band offset and mechanism of spontaneous and piezoelectric polarization were concerned to discuss our results.