Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures | Zendy

Kong Yuechan | Zendy; Youdou Zheng | Zendy; Rongming Chu | Zendy; Gu Shu-Lin | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures

Author(s) -

Kong Yuechan,

Youdou Zheng,

Rongming Chu,

Gu Shu-Lin

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.1756

Subject(s) - heterojunction , materials science , property (philosophy) , content (measure theory) , electron , fermi gas , optoelectronics , physics , quantum mechanics , mathematical analysis , philosophy , mathematics , epistemology

By self-consistently sovling the coupled Schrdinger and Poisson equations, we have investingated the property of the two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN heterostructures. We demonstrate the depen dence of the density, the distribution, and the subband occupation of the 2DEG on the Al-content of the AlGaN barrier. Band offset and mechanism of spontaneous and piezoelectric polarization were concerned to discuss our results.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research