Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films | Zendy

Luo Zhi | Zendy; Xuanying Lin | Zendy; Lin Shun-Hui | Zendy; Yu Chu-Ying | Zendy; Lin Kui-Xun | Zendy; Yunpeng Yu | Zendy; Tan Wei-Feng | Zendy

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Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films

Author(s) -

Luo Zhi,

Xuanying Lin,

Lin Shun-Hui,

Yu Chu-Ying,

Lin Kui-Xun,

Yunpeng Yu,

Tan Wei-Feng

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.169

Subject(s) - materials science , fourier transform infrared spectroscopy , silicon , plasma enhanced chemical vapor deposition , amorphous silicon , infrared , amorphous solid , hydrogen , substrate (aquarium) , infrared spectroscopy , chemical vapor deposition , analytical chemistry (journal) , hydrogen bond , crystalline silicon , nanotechnology , optics , optoelectronics , crystallography , molecule , chemistry , organic chemistry , physics , oceanography , geology

The Fourier transform infrared (FTIR) spectrum is an effective technology for studying the hydrogen content (CH) and the silicon-hydrogen bonding configuration (Si-Hn) of hydrogenated amorphous silicon (a-Si∶H) films. In this paper, CH and Si-Hn of a-Si∶H films, fabricated at different substrate temperatures (Ts) by plasma enhanced chemical vapor deposition method, have been obtained by analyzing their FTIR spectra that are treated by baseline fitting and Gaussian function fitting. The effects of Ts on CH and Si-Hn are studied.

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