Open AccessInfrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films
Author(s) -
Luo Zhi,
Xuelian Lin,
Shisheng Lin,
Chao Yu,
Kaifeng Lin,
Yunpeng Yu,
Tan Wei-Feng
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.169
Subject(s) - materials science , fourier transform infrared spectroscopy , silicon , plasma enhanced chemical vapor deposition , amorphous silicon , infrared , amorphous solid , hydrogen , substrate (aquarium) , infrared spectroscopy , chemical vapor deposition , analytical chemistry (journal) , hydrogen bond , crystalline silicon , nanotechnology , optics , optoelectronics , crystallography , molecule , chemistry , organic chemistry , physics , oceanography , geology
The Fourier transform infrared (FTIR) spectrum is an effective technology for studying the hydrogen content (CH) and the silicon-hydrogen bonding configuration (Si-Hn) of hydrogenated amorphous silicon (a-Si∶H) films. In this paper, CH and Si-Hn of a-Si∶H films, fabricated at different substrate temperatures (Ts) by plasma enhanced chemical vapor deposition method, have been obtained by analyzing their FTIR spectra that are treated by baseline fitting and Gaussian function fitting. The effects of Ts on CH and Si-Hn are studied.