Open AccessHigh dielectric constant in CaCu3Ti4O12 bulk an d thin films
Author(s) -
Yanli Zhao,
Zhengkuan Jiao,
Gao Guang-Han
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1500
Subject(s) - materials science , dielectric , thin film , pulsed laser deposition , high κ dielectric , thermal stability , epitaxy , condensed matter physics , composite material , optoelectronics , nanotechnology , chemical engineering , physics , layer (electronics) , engineering
CaCu3Ti4O12 bulk and thin films are prepared su ccessfully by solid-state reaction and pulsed laser deposition (PLD). Dielectric constants ε′ (1kHz,300K) higher than 14000 are found in both types of CaCu3Ti4O12 materials, which is the best result in this system. We first report the c-axis-oriented epitaxial CaCu3Ti4O12 thin film and i ts dieletric properties.Such a high dielectric constant does not depend much upon temperature in the range of 100-300K,showing that this material has high thermal stability.The behaviour of dielectric conductivity σd against frequency can be well ex plained in terms of the hopping mechanism.