Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe | Zendy

Guibin Chen | Zendy; Zhifeng Li | Zendy; Weiying Cai | Zendy; He Li | Zendy; Hu Xiao-Ning | Zendy; Wei Lu | Zendy; Xuechu Shen | Zendy

Open Access

Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe

Author(s) -

Guibin Chen,

Zhifeng Li,

Weiying Cai,

He Li,

Hu Xiao-Ning,

Wei Lu,

Xuechu Shen

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.1496

Subject(s) - materials science , epitaxy , proton , optoelectronics , beam (structure) , voltage , molecular beam epitaxy , wavelength , optics , electrical engineering , nanotechnology , physics , engineering , layer (electronics) , quantum mechanics

Large area n-on-p structures of p-n junction with different proton implantation doses are fabricated on the moleculer beam epitaxial grown HgCdTe films for mid-infrared wavelength region. Current-voltage characteristics of the p-n junction are measured at 77K. The zero-bias resistance-area product (R0A ) of 312.5Ω·cm2 is obtained when the proton implantation dose is 2×10 15cm-2 and R0A increases to 490Ω·cm2 after ann ealing at low temperatures.

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