Open AccessStudy of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe
Author(s) -
陈贵宾,
李志锋,
蔡炜颖,
何力,
胡晓宁,
陆卫,
沈学础
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1496
Subject(s) - materials science , epitaxy , proton , optoelectronics , beam (structure) , voltage , molecular beam epitaxy , wavelength , optics , electrical engineering , nanotechnology , physics , engineering , layer (electronics) , quantum mechanics
Large area n-on-p structures of p-n junction with different proton implantation doses are fabricated on the moleculer beam epitaxial grown HgCdTe films for mid-infrared wavelength region. Current-voltage characteristics of the p-n junction are measured at 77K. The zero-bias resistance-area product (R0A ) of 312.5Ω·cm2 is obtained when the proton implantation dose is 2×10 15cm-2 and R0A increases to 490Ω·cm2 after ann ealing at low temperatures.