Ultra violet photoluminescenc of ZnO films on different substrates | Zendy

Deheng Zhang | Zendy; Qingpu Wang | Zendy; Xue Zhong-ying | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Ultra violet photoluminescenc of ZnO films on different substrates

Author(s) -

Deheng Zhang,

Qingpu Wang,

Xue Zhong-ying

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.1484

Subject(s) - materials science , photoluminescence , sapphire , crystallite , crystallinity , annealing (glass) , ultraviolet , optoelectronics , excited state , sputter deposition , quartz , electron , analytical chemistry (journal) , sputtering , thin film , optics , nanotechnology , atomic physics , chemistry , laser , physics , quantum mechanics , chromatography , metallurgy , composite material

Polycrystalline ZnO films with a good preferred orientation were deposited on sapphire, Si and quartz substrates by rf magnetron sputtering. A 356 nm Ultraviolet (UV) photoluminescence (PL) peak and a 446 nm blue peak were observed at room temperature when excited with 270 nm light. After high-temperature annealing in oxygen, the crystallinity of the films was improved. The intensity of the UV emission increased by 7 and 14 times, respectively, for the films on sapphire and quartz substrates respectively. We conclude that the UV emission originates from the inter-band transition of electrons and the blue emission is due to the transition of electrons from the shallow donor level of the oxygen vacancies to the valence band.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research