Open AccessMagnetic properties and rectifying behaviour of silicon doped with gadolinium
Author(s) -
Zhou Jp,
Chen Nf,
Song Sl,
Chai Cl,
Yang Sy,
Z-K Liu,
Lin Ly
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1469
Subject(s) - gadolinium , materials science , silicon , doping , condensed matter physics , magnetic moment , magnet , atom (system on chip) , magnetoresistance , magnetism , ion , rkky interaction , nuclear magnetic resonance , magnetic field , optoelectronics , ferromagnetism , physics , metallurgy , quantum mechanics , computer science , embedded system
The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology.The magnet ic layer GdxSi1-x shows excellent magnetic properties at r oom temperature. High magnetic moment 10μB per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.