Magnetic properties and rectifying behaviour of silicon doped with gadolinium | Zendy

Jianping Zhou | Zendy; Nuofu Chen | Zendy; Song Shulin | Zendy; Chunlin Chai | Zendy; Shaoyan Yang | Zendy; Zhikai Liu | Zendy; Lin Lanying | Zendy

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Magnetic properties and rectifying behaviour of silicon doped with gadolinium

Author(s) -

Jianping Zhou,

Nuofu Chen,

Song Shulin,

Chunlin Chai,

Shaoyan Yang,

Zhikai Liu,

Lin Lanying

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.1469

Subject(s) - gadolinium , materials science , silicon , doping , condensed matter physics , magnetic moment , magnet , atom (system on chip) , magnetoresistance , magnetism , ion , rkky interaction , nuclear magnetic resonance , magnetic field , optoelectronics , ferromagnetism , physics , metallurgy , quantum mechanics , computer science , embedded system

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology.The magnet ic layer GdxSi1-x shows excellent magnetic properties at r oom temperature. High magnetic moment 10μB per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

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