Free-electron laser induced nonlinear optical absorption in semiconductors | Zendy

Jun Jiang | Zendy; Ning Li | Zendy; Guibin Chen | Zendy; Wei Lü | Zendy; Mingkai Wang | Zendy; Xueping Yang | Zendy; Gang Wu | Zendy; Fan Yaohui | Zendy; Q.S. Li | Zendy; Yuan Xian-Zhang | Zendy

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Free-electron laser induced nonlinear optical absorption in semiconductors

Author(s) -

Jun Jiang,

Ning Li,

Guibin Chen,

Wei Lü,

Mingkai Wang,

Xueping Yang,

Gang Wu,

Fan Yaohui,

Q.S. Li,

Yuan Xian-Zhang

Publication year - 2003

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.52.1403

Subject(s) - semiconductor , free carrier absorption , materials science , laser , electron , absorption (acoustics) , free electron model , two photon absorption , atomic physics , saturation (graph theory) , absorption cross section , optoelectronics , optics , cross section (physics) , physics , mathematics , quantum mechanics , combinatorics , composite material

Using a free-electron laser source,we have studied the nonlinear absorption in I nSb,Hg1-xCdxTe and InAs semiconductors.By measuring the tr ansmission,two -photon-absorption(TPA)has been investigated as a function of the input power.In two cases,a distinct saturation of TPA coefficients has been observed.Using an extension of these methods,we demonstrated that the reduced transmission at high intensities is primarily due to free-carrier-absorption(FCA) of the electrons a nd holes generated by TPA,not directly due to the TPA process.Furthermore,by car eful calculation,we have extracted the convincing cross section of FCA.

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