Open AccessFree-electron laser induced nonlinear optical absorption in semiconductors
Author(s) -
Jiang Jun,
Ning Li,
Guibin Chen,
Wei Lu,
Mingkai Wang,
Xiaobo Yang,
Gang Wu,
Yao-hui Fan,
Yonggui Li,
Yuan Xian-Zhang
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1403
Subject(s) - semiconductor , free carrier absorption , materials science , laser , electron , absorption (acoustics) , free electron model , two photon absorption , atomic physics , saturation (graph theory) , absorption cross section , optoelectronics , optics , cross section (physics) , physics , mathematics , quantum mechanics , combinatorics , composite material
Using a free-electron laser source,we have studied the nonlinear absorption in I nSb,Hg1-xCdxTe and InAs semiconductors.By measuring the tr ansmission,two -photon-absorption(TPA)has been investigated as a function of the input power.In two cases,a distinct saturation of TPA coefficients has been observed.Using an extension of these methods,we demonstrated that the reduced transmission at high intensities is primarily due to free-carrier-absorption(FCA) of the electrons a nd holes generated by TPA,not directly due to the TPA process.Furthermore,by car eful calculation,we have extracted the convincing cross section of FCA.