Open AccessGraded heterojunction in AlGaInP compound semiconductors and its application to HB-LED
Author(s) -
Lu Liu,
Guanghan Fan,
Changjun Liao,
Cao Ming-De,
Gui-chu Chen,
Lianhui Chen
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1264
Subject(s) - heterojunction , semiconductor , materials science , optoelectronics , compound semiconductor , semiconductor materials , engineering physics , nanotechnology , physics , epitaxy , layer (electronics)
A simple model of the graded heterojunction in ALGaInP compound semiconductors was introduced to analyze the energy band profile.We analyze the energy band profiles with the different grading ways but the same grading length,under the different doping densities.We analyze the effect of the different grading lengths on the surplus of the spike potential to the potential of the n region under the different doping densities.We analyze the effect of the graded heterojunction,finding it can improve the HB-LED (high-brightness light emitting diode)performance,and proved by the experiment.A graded heterojunction should be applied to HB-LED,based on this analysis.