Open AccessStudy on lowtemperature growth of AlN single crystal film by ECRPEMOCVD
Author(s) -
Fuwen Qin,
Gu B,
Yin Xu,
Di Yang
Publication year - 2003
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.52.1240
Subject(s) - materials science , reflection high energy electron diffraction , electron cyclotron resonance , electron diffraction , substrate (aquarium) , layer (electronics) , transmission electron microscopy , diffraction , chemical vapor deposition , crystal (programming language) , single crystal , analytical chemistry (journal) , thin film , reflection (computer programming) , optoelectronics , plasma , crystallography , epitaxy , optics , nanotechnology , chemistry , oceanography , physics , quantum mechanics , chromatography , geology , computer science , programming language
The AlN film with GaN initiallayer (GaN buffer layer and epilayer)has been grown on αAl2O3 (0001)substrate by electron cyclotron resonanceplasmaenhanced metal organic chemical vapor deposition(ECRPEMOCVD) technique at low temperatures using TMAl and high pure N2 as Al and N sources, respectively. The effects of hydrogen plasma cleaning, nitridation and GaN initallayer on the quality of AlN epilayer have been investigated by RHEED(reflection highenergy electron diffraction) , TEM(transmission electron microscope) and XRD(xray diffraction). And highquality hexagonalphase AlN single crystal films whose cleavability is the same as the substrate have been grown at low temperatures. The full width at half maximum of XRD peaks is 12′.