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界面态电荷对6H碳化硅N沟MOSFET阈值电压和跨导的影响
Author(s) -
Xiaoyan Tang,
Yimen Zhang,
Yuming Zhang
Publication year - 2002
Publication title -
acta physica sinica
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.51.771
Subject(s) - zhàng , mosfet , physics , quantum mechanics , political science , china , transistor , law , voltage

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