Open AccessSTUDY ON α-C∶F FILMS DEPOSITED BY ELECTRON CYCLOTRONRESONANCE PLASMA CHEMICAL VAPOR DEPOSITION
Author(s) -
Chao Ye,
Ning Zhao-Yuan,
Cheng Shan-Hua,
Jian Kang
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.784
Subject(s) - electron cyclotron resonance , analytical chemistry (journal) , x ray photoelectron spectroscopy , chemical vapor deposition , microwave , materials science , amorphous solid , fourier transform infrared spectroscopy , carbon film , plasma , thin film , nuclear magnetic resonance , chemistry , optics , physics , nanotechnology , crystallography , organic chemistry , quantum mechanics
Amorphous fluorinated carbon (α-C∶F) films with F/C ratios between 0.11 and 0.62 are prepared by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition using trifluoromethane (CHF3) and benzene (C6H6) as source gases.The effect of microwave input powers on the deposition rates,F/C ratios and the bond configurations of films is analyzed by film thickness measured, Fourier transform infrared and X-ray photoelectron spectroscopy analysis.The increase of microwave power results in the increase of deposition rate,the decrease of F/C ratios,and the abundance of CF and CF3 groups of the films.The abundance of CF2 groups almost does not vary as microwave power increases.The films are mainly composed of CF2 groups and CC bonds can be obtained at higher microwave power.The frequency dependence of ε(1×103—1×106Hz) and tan δ(1×102—1×105Hz)all follow a power law.The electron polarization is the main contributor to dielectric polarization of film.