INFRAREDPHOTOCONDUCTIVITYSPECTRAOFDEEPLEVELS IN Zn0.04Cd0.96Te | Zendy

YUAN XIAN-ZHANG | Zendy; PEI HUI-YUAN | Zendy; Wei Lü | Zendy; Li Ning | Zendy; Guoliang Shi | Zendy; FANG JIA-XIONG | Zendy; Xuechu Shen | Zendy

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INFRAREDPHOTOCONDUCTIVITYSPECTRAOFDEEPLEVELS IN Zn0.04Cd0.96Te

Author(s) -

YUAN XIAN-ZHANG,

PEI HUI-YUAN,

Wei Lü,

Li Ning,

Guoliang Shi,

FANG JIA-XIONG,

Xuechu Shen

Publication year - 2001

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.50.775

Subject(s) - photoconductivity , materials science , photoluminescence , analytical chemistry (journal) , spectroscopy , optoelectronics , physics , chemistry , environmental chemistry , quantum mechanics

The infrared photoconductivity spectroscopy has been employed to investigate the deep levels in semi-insulating p-type Zn0.04Cd0.96Te. At the temperature ranging between 4.2 and 165K, photoconductivity peaks at 0.24,0.34,0.38,0.47,0.55 and 0.80eV are observed. In conjunction with the photoluminescence measurement of the sample at 4.2K, the characteristics of the deep levels related to the photoconductivity peaks are discussed.

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