Open AccessINFRAREDPHOTOCONDUCTIVITYSPECTRAOFDEEPLEVELS IN Zn0.04Cd0.96Te
Author(s) -
袁先漳,
裴慧元,
陆卫,
李宁,
史国良,
方家熊,
沈学础
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.775
Subject(s) - photoconductivity , materials science , photoluminescence , analytical chemistry (journal) , spectroscopy , optoelectronics , physics , chemistry , environmental chemistry , quantum mechanics
The infrared photoconductivity spectroscopy has been employed to investigate the deep levels in semi-insulating p-type Zn0.04Cd0.96Te. At the temperature ranging between 4.2 and 165K, photoconductivity peaks at 0.24,0.34,0.38,0.47,0.55 and 0.80eV are observed. In conjunction with the photoluminescence measurement of the sample at 4.2K, the characteristics of the deep levels related to the photoconductivity peaks are discussed.