Open AccessCHEMICAL BONDING STRUCTURE OF FLUORINATED AMORPHOUS CARBON FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION
Author(s) -
Ning Zhao-Yuan,
Cheng Shan-hua,
Chao Ye
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.566
Subject(s) - electron cyclotron resonance , chemical vapor deposition , materials science , amorphous carbon , amorphous solid , carbon film , chemical bond , plasma , plasma enhanced chemical vapor deposition , carbon fibers , deposition (geology) , electron beam physical vapor deposition , electron , chemical engineering , analytical chemistry (journal) , atomic physics , chemical physics , thin film , nanotechnology , chemistry , organic chemistry , composite material , physics , composite number , nuclear physics , paleontology , sediment , biology , engineering
The a-C∶Fx films with low dielectric constant has been studied,considering that they can be used for interlayer dielectric in ultra-large integrated circuits.These films were deposited by using electron cyclotron resonance plasma reactor with CHF3 and C6H6 mixture as source gas.The effects of microwave power,pressure and CHF3/C6H6 ratios on the film deposition rates have been investigated.The fluorocarbon and hydrocarbon radical species in the plasma discharges were monitored by the optical emission spectra.The structural properties of the films were characterized by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy.A relationship between the radical species in the discharge plasma and bonding structure of the films is analysed.It demonstrates that CF2,CF and CH radicals play the important roles in the forming of films.