Open AccessEPITAXIAL GROWTH OF (0001)ORIENTED 6H-SiC FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING
Author(s) -
王玉霞,
郭震,
何海平,
曹颖,
汤洪高
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.256
Subject(s) - materials science , x ray photoelectron spectroscopy , crystallite , fourier transform infrared spectroscopy , annealing (glass) , transmission electron microscopy , epitaxy , raman spectroscopy , analytical chemistry (journal) , thin film , oxide , scanning electron microscope , polystyrene , chemical engineering , composite material , nanotechnology , optics , polymer , layer (electronics) , engineering , chemistry , physics , chromatography , metallurgy
SiC films were prepared on Si(111) substrates by annealing polystyrene gel films at temperature 950℃ in vacuum(10-3 Pa).Fourier transform infrared spectroscopy(FTIR),X-ray diffraction(XRD), Transmission electron microscopy(TEM).Raman scattering and X-ray photoelectron spectroscopy(XPS) were used to study the morphology of the surface, crystal structure. composition and chemical state of the element of the SiC films. It revealed that the films consisted of preferentially oriented crystalline 6H-SiC epilayer which grew along(0001) planes parallel to Si(111) planes. The ratio of Si to C was about 1 and there were some carbon and oxide contaminant species in the form of CH, CO and Si2O3 along with a small amount of adsorptive oxide at the surface of the films. The polycrystalline grains in the films grew cylindrically along c axis.Their maximum size was about 150nm. The film was smooth. dense and uniform with a thickness of about 0.3 μm. It was found that covering the polystyrene film with a Si plate could increase the quantity of SiC during anncaling.