Open AccessCURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER
Author(s) -
Hongwei Li,
Taihong Wang
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.2506
Subject(s) - quantum dot , materials science , condensed matter physics , hysteresis , metastability , current (fluid) , schottky barrier , optoelectronics , quantum tunnelling , relaxation (psychology) , schottky diode , diode , physics , quantum mechanics , psychology , social psychology , thermodynamics
We have investigated the transport properties of a metal-semiconductor-metal structure containing multi-layers of InAs quantum dots from 77 K to room temperature. Three distinct phenomena are observed in the current voltage( I-V ) curves:the hysteresis loops, current jumps and voltage offsets. Because of the coupling between the multi layered quantum dots, the devices made of these quantum dots exhibit much more complicated phenomenon than the devices containing single-layer quantum dots. The devices may undergo many metastable states and relaxation processes. These processes would induce current jump structures and noise in the I-V curve.