Open AccessTHE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE
Author(s) -
Hongwei Li,
Taihong Wang
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.2501
Subject(s) - saturation current , quantum tunnelling , schottky diode , schottky barrier , materials science , quantum dot , hysteresis , condensed matter physics , saturation (graph theory) , atmospheric temperature range , diode , metal–semiconductor junction , optoelectronics , semiconductor , rectangular potential barrier , range (aeronautics) , voltage , physics , mathematics , quantum mechanics , combinatorics , meteorology , composite material
In the temperature range from 77 to 292 K, we investigated the transport properties of metal-semiconductor-metal diode containing InAs quantum dots. With increasing temperature, the current hysteresis loops, which were caused by charged quantum dots, reduced gradually. The resonant tunneling process, which may occur in some Schottky barriers, could induce steps on the I-V curves in the measured temperature range and diminish the hysteresis loops intensively. We have calculated the saturation current density and ideality factor of the Schottky barrier with reverse characteristics. We found that the resonant tunneling process would shift the Schottky barrier away from the ideality status, while the charging effect mainly influenced the barrier height and therefore influenced the saturation current density.