Open AccessROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING
Author(s) -
Yuan Fangcheng,
Ran Guang-Zhao,
C. R. Yuan,
Zhang Bo-Rui,
Qiao Yong-Ping,
Fu Jishi,
Qin Guo-Gang,
Ma Zhen-Chang,
ZONG WAN-HUA
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.2487
Subject(s) - silicon , materials science , photoluminescence , silicon oxide , doping , annealing (glass) , sputter deposition , oxide , analytical chemistry (journal) , optoelectronics , oxide thin film transistor , cavity magnetron , sputtering , thin film , nanotechnology , chemistry , metallurgy , silicon nitride , chromatography , layer (electronics) , thin film transistor
Room temperature photoluminescence (PL) has been observed from Er doped silicon rich silicon oxide films grown by magnetron sputtering. For all kinds of silicon rich silicon oxide films grown with different excess Si contents, each PL spectrum has two peaks at 1.54 and 1.38μm, which originate from Er3+ and a certain kind of defects, respectively, in the silicon rich silicon oxide. It was found that 1.54 and 1.38μm PL peak intensities are correlated with each other. The PL intensity-dependence on the excess-Si content and annealing temperature was studied in detail.