Open Access
RADIATION EFFECTS OF MOS DEVICE AT LOW DOSE RATE AND LOW TEMPERATURE
Author(s) -
张廷庆,
刘传洋,
刘家璐,
王剑屏,
黄智,
徐娜军,
何宝平,
彭宏论,
姚育娟
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.2434
Subject(s) - materials science , irradiation , trap (plumbing) , radiation , dose rate , threshold voltage , optoelectronics , oxide , radiation effect , atomic physics , voltage , radiochemistry , optics , electrical engineering , chemistry , transistor , nuclear physics , physics , meteorology , metallurgy , engineering
Effects of irradiation dose rates and irradiation temperature are investigated for MOS device under γ-rays. Threshold voltage shift is compared after the MOS devices are radiated at different dose rates and different temperatures. At low dose rate,interface trap formation is affected by the irradiation time and H+ induced in the oxide,the longer the device is radiated and the greater the number of induced H+,the more the interface trap. The effects of temperature on radiation response are related to the time of interface trap formation,it takes more time to form interface trap at low temperatures.