Open AccessXPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE
Author(s) -
Junhua Yuan,
Guangde Chen,
Ming Qi,
Aizhen Li,
Xu Zhuo
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.2429
Subject(s) - x ray photoelectron spectroscopy , materials science , auger electron spectroscopy , impurity , gallium , sputtering , acceptor , analytical chemistry (journal) , auger , layer (electronics) , spectroscopy , doping , thin film , optoelectronics , atomic physics , nanotechnology , chemical engineering , metallurgy , chemistry , condensed matter physics , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics , engineering
The surface composition of GaN grown by plasma-assisted MBE was investigated using X-ray photoelectron spectroscopy and Auger election emission spectroscopy(AES), while the depth profile was analyzed by AES with Ar iron sputtering. The experimental results indicated that unintentional doped semi-in salating films formed by plasma-assisted MBE had a rich-gallium surface. It was found that the impurity carbon was chiefly adsorbed onto the surface while oxygen diffused into the bulk to distribute in a certain depth. Consequently, the oxygen-related impurity band and an acceptor level could be simultaneously formed in the layer. This influenced the optical and electrical properties of the films.