STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS | Zendy

GUO HONG-XIA | Zendy; YuSheng Chen | Zendy; Yimen Zhang | Zendy; Zhou Hui | Zendy; Gong Jiancheng | Zendy; HAN FU-BIN | Zendy; Ying Guan | Zendy; Wu Guorong | Zendy

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STUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS

Author(s) -

GUO HONG-XIA,

YuSheng Chen,

Yimen Zhang,

Zhou Hui,

Gong Jiancheng,

HAN FU-BIN,

Ying Guan,

Wu Guorong

Publication year - 2001

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.50.2279

Subject(s) - irradiation , materials science , cmos , upset , radiation hardening , transient (computer programming) , optoelectronics , radiation , hardening (computing) , voltage , optics , physics , nuclear physics , composite material , computer science , quantum mechanics , political science , law , operating system , layer (electronics)

The results are presented with emphasis on the relative dose-enhancement factor for complementary metal-oxide semiconductor (CMOS) devices irradiated by steady state and transient pulsed X-rays. With the help of experimental study, sensitive parameter threshold voltage as a function of irradiation dose was obtained. So the equivalent relation of total dose damage is eslablished by comparing the response of devices irradiated by 60Co γ-rays and X-rays. By employing the X-ray transient pulsed sources, the research of X-rays transient upset enhancement effects is carried out using bi-laminate structure. Upset enhancement factor of X-rays are measured. These methods are provided for X-ray radiation hardening technology an effective evaluation method.

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