Open AccessSTUDY OF RELATIVE DOSE-ENHANCEMENT EFFECTS ON CMOS DEVICE IRRADIATED BY STEADY-STATE AND TRANSIENT PULSED X-RAYS
Author(s) -
郭红霞,
陈雨生,
张义门,
周辉,
龚建成,
韩福斌,
关颖,
吴国荣
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.2279
Subject(s) - irradiation , materials science , cmos , upset , radiation hardening , transient (computer programming) , optoelectronics , radiation , hardening (computing) , voltage , optics , physics , nuclear physics , composite material , computer science , quantum mechanics , political science , law , operating system , layer (electronics)
The results are presented with emphasis on the relative dose-enhancement factor for complementary metal-oxide semiconductor (CMOS) devices irradiated by steady state and transient pulsed X-rays. With the help of experimental study, sensitive parameter threshold voltage as a function of irradiation dose was obtained. So the equivalent relation of total dose damage is eslablished by comparing the response of devices irradiated by 60Co γ-rays and X-rays. By employing the X-ray transient pulsed sources, the research of X-rays transient upset enhancement effects is carried out using bi-laminate structure. Upset enhancement factor of X-rays are measured. These methods are provided for X-ray radiation hardening technology an effective evaluation method.