Open AccessDEPOSITION OF HIGH-QUALITY c-BN FILM ENHANCED BY PULSED DC BIAS TECHNIQUE
Author(s) -
TIAN JING-ZE,
LU Fan-xiu,
Lifang Xia
Publication year - 2001
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.2258
Subject(s) - materials science , boron nitride , pulsed dc , substrate (aquarium) , analytical chemistry (journal) , dc bias , plasma , direct current , pulsed laser deposition , deposition (geology) , thin film , evaporation , current (fluid) , biasing , optoelectronics , nanotechnology , sputtering , voltage , sputter deposition , electrical engineering , chemistry , paleontology , physics , engineering , quantum mechanics , sediment , biology , oceanography , chromatography , geology , thermodynamics
Cubic boron nitride (c-BN) films were synthesized using magnetically enhanced active reaction evaporation system in which pulsed DC technique was employed to enhance the formation of c-BN film. The effect of pulsed DC bias, plasma discharge current, Ar/N2 flow ratio, substrate temperature on the formation of c-BN films was investigated. The friction of c-BN phase in the film increased with the increase of pulsed DC negative bias and discharge current.Almost single phase c-BN films were obtained when deposited at-155V of pulsed DC bias,15A of discharge current,500℃ of substrate temperature and 10 of Ar/N2 flow ratio.
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