Open AccessCORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE
Author(s) -
Hongwei Li,
Taihong Wang
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.2038
Subject(s) - quantum dot , electron , condensed matter physics , semiconductor , hysteresis , materials science , metal , quantum point contact , relaxation (psychology) , nanotechnology , quantum well , physics , optoelectronics , quantum mechanics , psychology , social psychology , laser , metallurgy
We report a correlated discharging process in current transport through metal-semiconductor-metal structures containing InAs self-assembled quantum dots.Due to the charged and discharged states of quantum dots,two different current states with a round hysteresis loop are usually observed in our structure.The transitions between the two current states are controlled by the applied voltages.Besides the normal charging and discharging processes,a correlated discharging is observed at 77K.Interactions that relate to the electrons in the quantum dots in the system are considered.The correlated discharging process is attributed to the interaction between electrons in the quantum dots and the conducting two-dimensional electron gas beneath the dot layer.Based on our analysis a simple picture of the relaxation process is given.