Open AccessMONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE
Author(s) -
Mu Weibing,
Chen Panxun
Publication year - 2001
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.189
Subject(s) - monte carlo method , interface (matter) , materials science , metal , x ray , computational physics , physics , optics , composite material , statistics , mathematics , capillary number , capillary action , metallurgy
The dose would be enhanced on the low- Z material side when X-ray enters the interface constructed with two different materials.The mechanism of dose enhancement has been discussed and the Dose Enhancement Factors of W-Si,W-SiO2,Ta-Si and Ta-SiO2 interfaces are calculated by the Monte-Carlo method.
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