Open AccessCOMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS
Author(s) -
Shenglin Ma,
G. G. Qin,
Long You,
Yinyue Wang
Publication year - 2001
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.1580
Subject(s) - materials science , photoluminescence , silicon , annealing (glass) , oxide , silicon oxide , luminescence , nanometre , transmission electron microscopy , sputtering , sputter deposition , analytical chemistry (journal) , optoelectronics , thin film , nanotechnology , composite material , metallurgy , chemistry , silicon nitride , chromatography
Si-containing silicon oxide (SSO) films and Ge-containing silicon oxide (GSO) films were deposited on p-type Si substrates using the RF magnetron sputtering technique with a Si-SiO2 and a Ge-SiO2 composite target, respectively. These films were annealed in a N2 ambient at temperatures from 300 to 1100℃. Using high resolution transmission electron microscopy,nanometer Si particles and nanometer Ge particles were observed in the SSO and GSO films,respectively,after annealing at 900 or 1100℃. All the PL spectra from the two types of films annealed at various temperatures have similar shapes with peak positions around 580nm (2.1eV). It is indicated that light emission originates from luminescence centers in Si oxide films. The experimental results have been explained reasonably.