SIMULATION OF THE INITIAL GROWTH OF METAL THIN FILMS AT HIGH TEMPERATURE | Zendy

Fengmin Wu | Zendy; SHI JIAN-QING | Zendy; WU ZI-QIN | Zendy

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SIMULATION OF THE INITIAL GROWTH OF METAL THIN FILMS AT HIGH TEMPERATURE

Author(s) -

Fengmin Wu,

SHI JIAN-QING,

WU ZI-QIN

Publication year - 2001

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.50.1555

Subject(s) - nucleation , coalescence (physics) , materials science , thin film , diffusion , chemical physics , evaporation , surface diffusion , island growth , metal , growth rate , substrate (aquarium) , nanotechnology , thermodynamics , chemistry , layer (electronics) , metallurgy , epitaxy , physics , geometry , mathematics , adsorption , oceanography , astrobiology , geology

The atomic processes of nucleation and initial growth of thin films on metal surfaces are simulated by Monte Carlo method,using realistic growth model-Fe on Fe (001) surface and physical parameters.By taking into account the physical processes involved in film growth,such as deposition,diffusion,nucleation,growth,evaporation,edge diffusion and coalescence,the morphology and quantitative characteristies of thin film growth are obtained.The details of thin film growth at high substrate temperatures,such as the change of island density and growth rate with temperature and coverage,are obtained by making statistical counting during the growth processes,which are difficult to access directly in real experiments.

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