Open AccessSTRUCTURAL CHARACTERIZATION OF C3N4 THIN FILMS SYNTHESIZED BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION
Author(s) -
Yongping Zhang,
Gu Yousong,
Gao Hong-Jun,
Xiufang Zhang
Publication year - 2001
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.50.1396
Subject(s) - materials science , raman spectroscopy , chemical vapor deposition , fourier transform infrared spectroscopy , carbon film , scanning electron microscope , thin film , carbon nitride , analytical chemistry (journal) , plasma enhanced chemical vapor deposition , microwave , chemical engineering , nanotechnology , optics , chemistry , composite material , photocatalysis , organic chemistry , physics , engineering , quantum mechanics , catalysis
Crystalline carbon nitride films have been synthesized on Si substrates by microwave plasma chemical vapor deposition technique, using a gas mixture of nitrogen and methane. Scanning electron microscopy shows that the film consisted of hexagonal crystalline rods. X-ray diffraction and transmission electron microscopy indicate the films are mainly composed of α-and β-C3N4, and these results match more closely with α-C3N4 than with β-C3N4 phase. Fourier transform infrared (FTIR) and Raman spectra of carbon nitride were calculated through Hooke's law. The observed FTIR and Raman spectra support the existence of α- and β-C3N4 in the films.
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