
INVESTIGATION OF THE LIGHT HOLE IN p-TYPE Hg1-xCdxTe
Author(s) -
Chunping Jiang,
Gui Yong-Sheng,
Zheng Gou-Zhen,
Ma Zhi-Xun,
Shanli Wang,
He Li,
Chu Jun-Hao
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.959
Subject(s) - molecular beam epitaxy , hall effect , materials science , infrared , electron mobility , detector , tensor (intrinsic definition) , electrical resistivity and conductivity , condensed matter physics , magnetic field , optics , conductivity , optoelectronics , physics , epitaxy , chemistry , nanotechnology , layer (electronics) , quantum mechanics , mathematics , pure mathematics
We have simultaneously determined the densities and mobilities of light and heavy holes at various temperatures (12K to 300K) in two molecular beam epitaxy-grown p-type Hg1-xCdxTe (x=0.224) samples from variable magnetic-field Hall measurement by using a hybrid approach consisting of mobility spectrum analysis followed by a multi-carrier fitting procedure.In addition, we directly observe the contribution of the light hole to the conductivity tensor component. The experimental values obtained in this work should be useful in modeling of HgCdTe infrared detectors.