RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO2 THIN FILMS | Zendy

Kaigui Zhu | Zendy; Shi Jian-zhong | Zendy; SHAO QING-YI | Zendy

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RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO2 THIN FILMS

Author(s) -

Kaigui Zhu,

Shi Jian-zhong,

SHAO QING-YI

Publication year - 2000

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.49.2304

Subject(s) - materials science , nanocrystal , raman scattering , raman spectroscopy , phonon , scattering , thin film , crystal (programming language) , x ray raman scattering , nanotechnology , optics , condensed matter physics , physics , computer science , programming language

Raman scattering from InAs nanocrystals embedded in SiO2 thin films has been measured and studied. Raman spectra of InAs nanocrystals have a similar feature with that of bulk InAs crystal. Broadened and red-shifted Raman scattering peaks were observed from the nanocrystals; this has been attributed to the phonon confinement effect. A compressive stress in the interface between InAs nanocrystals and the SiO2 matrix was also taken into account to interpret the red shift.

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