STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYER | Zendy

Xiaodong Wang | Zendy; Liu Huiyun | Zendy; Zhichuan Niu | Zendy; Feng Song-Lin | Zendy

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STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYER

Author(s) -

Xiaodong Wang,

Liu Huiyun,

Zhichuan Niu,

Feng Song-Lin

Publication year - 2000

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.49.2230

Subject(s) - quantum dot , materials science , laser linewidth , photoluminescence , transmission electron microscopy , optoelectronics , layer (electronics) , x ray absorption spectroscopy , gallium arsenide , substrate (aquarium) , nanotechnology , absorption spectroscopy , optics , physics , laser , oceanography , geology

InAs self-assembled quantum dots(QDs) covered by 3-nm-thick InxGa1-xAs(0≤x≤0.3) capping layer have been grown on GaAs(100) substrate.Transmission electron microscopy shows that InGaAs layer reduces the strain in the InAs islands,and atomic force microscopy evidences the deposition of InGaAs on the top of InAs islands when x=0.3.The significant redshift of the photoluminescence (PL) peak energy and the reduction of PL linewidth of InAs quantum dots covered by InGaAs are observed.In addition,InGaAs overgrowth layer suppresses the temperature sensitivity of PL peak energy.Based on our analysis,the strain-reduction and the size distribution of the InAs QDs are the main cause of the redshift and temperature insensitivity of the PL respectively.

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