Open AccessSTUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYER
Author(s) -
Xiaodong Wang,
Huiyun Liu,
Zhichuan Niu,
Shouhua Feng
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.2230
Subject(s) - quantum dot , materials science , laser linewidth , photoluminescence , transmission electron microscopy , optoelectronics , layer (electronics) , x ray absorption spectroscopy , gallium arsenide , substrate (aquarium) , nanotechnology , absorption spectroscopy , optics , physics , laser , oceanography , geology
InAs self-assembled quantum dots(QDs) covered by 3-nm-thick InxGa1-xAs(0≤x≤0.3) capping layer have been grown on GaAs(100) substrate.Transmission electron microscopy shows that InGaAs layer reduces the strain in the InAs islands,and atomic force microscopy evidences the deposition of InGaAs on the top of InAs islands when x=0.3.The significant redshift of the photoluminescence (PL) peak energy and the reduction of PL linewidth of InAs quantum dots covered by InGaAs are observed.In addition,InGaAs overgrowth layer suppresses the temperature sensitivity of PL peak energy.Based on our analysis,the strain-reduction and the size distribution of the InAs QDs are the main cause of the redshift and temperature insensitivity of the PL respectively.