Open AccessTHE FORMATION AND CHARACTERISTICS OF Si1-xCx ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES
Author(s) -
Yinshu Wang,
Jinmin Li,
Yufeng Jin,
Yutian Wang,
Lin Lanying
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.2210
Subject(s) - annealing (glass) , materials science , alloy , ion implantation , silicon , epitaxy , carbon atom , carbon fibers , ion , analytical chemistry (journal) , crystallography , metallurgy , nanotechnology , chemistry , composite material , alkyl , organic chemistry , layer (electronics) , chromatography , composite number
Carbon ions with concentration of (0.6—1.5)% were implanted into silicon crystals at room temperature and Si1-xCx alloys were grown by solid phase epitaxy with high temperature annealing. The formation and characteristics of Si1-xCx alloys under different implanted carbon doses were studied. If the implanted carbon atom concentration was less than 0.6%, carbon atoms would tend to combine with the defects produced during implantation and it was difficult for Si1-xCx alloys to form during annealing at 850—950℃. With the increase of implanted C concentration, almost all implanted carbon atoms would occupy substitution positions to form Si1-xCx alloys, but only part of implanted carbon atoms would occupy the substitution position to form Si1-xCx alloys as the implanted dose increased to 1.5%. Most Si1-xCx alloy phases would vanish as the annealing temperature was increased higher.