CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR | Zendy

Yuan Xiao-li | Zendy; Yi Shi | Zendy; Yang Hong-guan | Zendy; Huiming Bu | Zendy; WU JUN | Zendy; Bo Zhao | Zendy; Rong Zhang | Zendy; ZHENG YOU-DOU | Zendy

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CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR

Author(s) -

Yuan Xiao-li,

Yi Shi,

Yang Hong-guan,

Huiming Bu,

WU JUN,

Bo Zhao,

Rong Zhang,

ZHENG YOU-DOU

Publication year - 2000

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.49.2037

Subject(s) - quantum dot , quantum tunnelling , capacitance , materials science , capacitor , coulomb blockade , condensed matter physics , quantum point contact , substrate (aquarium) , ground state , silicon , electron , physics , optoelectronics , atomic physics , quantum well , quantum mechanics , voltage , laser , oceanography , electrode , transistor , geology

Using frequency-dependent capacitance spectroscopy, we investigate the charging dynamics of silicon quantum dots embedded in oxide matrix through a SiO2/Si-quantum dots/SiO2/Si-substrate tunnel capacitor. Two resonance peaks both for capacitance and conductance in the inversion region are observed at room temperature, being attributed to the direct tunneling between the condu ctance band ofSi-substrate and the one-and two-electron ground-state level of th e Si quantum dot. The Coulomb charging energy of the dots is extracted from the experimental results.

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