Open AccessCHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR
Author(s) -
Xiaoli Yuan,
Shaohua Yi,
Yang Hong-guan,
Bu Hui-Ming,
Wu Jun,
Bo Zhao,
Rong Zhang,
Youdou Zheng
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.2037
Subject(s) - quantum dot , quantum tunnelling , capacitance , materials science , capacitor , coulomb blockade , condensed matter physics , quantum point contact , substrate (aquarium) , ground state , silicon , electron , physics , optoelectronics , atomic physics , quantum well , quantum mechanics , voltage , laser , oceanography , electrode , transistor , geology
Using frequency-dependent capacitance spectroscopy, we investigate the charging dynamics of silicon quantum dots embedded in oxide matrix through a SiO2/Si-quantum dots/SiO2/Si-substrate tunnel capacitor. Two resonance peaks both for capacitance and conductance in the inversion region are observed at room temperature, being attributed to the direct tunneling between the condu ctance band ofSi-substrate and the one-and two-electron ground-state level of th e Si quantum dot. The Coulomb charging energy of the dots is extracted from the experimental results.