Open AccessA SEMIEMPIRICAL STUDY OF THE Sb/Si(001) SURFACE
Author(s) -
YaLing He,
Jingguang Che
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1747
Subject(s) - materials science , perpendicular , dimer , substrate (aquarium) , adsorption , surface (topology) , surface stress , stress (linguistics) , molecular physics , condensed matter physics , composite material , chemistry , surface energy , nuclear magnetic resonance , physics , geometry , mathematics , philosophy , linguistics , oceanography , geology
The properties of Sb adsorption on the Si(001) substrate have been studied by us ing the semiempirical approach for calculating the surface stress based on the C hadi's model and the Green's function method. It is shown that the Sb atoms form symmetric dimers on the Si(001) surface with the dimer bond length being 0.293n m. No significant relaxations can be found in subsurface layers. The Sb/Si(001)2 ×1 surface is shown to be under tensile stress of 1.0eV/(1×1cell) along the di mer direction and compress stress of-1.1eV(1×1cell) perpendicular to the dimer direction. The main contribution of surface stress of Sb/Si(001) comes from the top three layers.