Open AccessSTUDY ON THE HOT-CARRIER-DEGRADATION MECHANISM AND HOT-CARRIER-EFFECT IMMUNITY I N ADVANCED GROOVED-GATE PMOSFET
Author(s) -
Hang Ren,
Hao Yue
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1683
Subject(s) - materials science , planar , optoelectronics , mosfet , cmos , metal gate , degradation (telecommunications) , electron mobility , threshold voltage , short channel effect , gate oxide , electrical engineering , voltage , transistor , computer science , engineering , computer graphics (images)
In this paper,the hot-carrier mechanism in grooved-gate MOS is analyzed at first .It is found that the hot-carrier effect reaches its highest generate rate under medium gate bias voltage of the three stress areas.Then,the characteristics of hot-carrier-effect in grooved-gate and planar PMOSFET are simulated using advanc ed 2-dimensional device simulator.The results show that the hot-carrier generate d in grooved-gate PMOSFET is far less than in planar PMOSFET,especially for the case of channel length in deep-sub-micron and super deep-sub-micron region.In or der to investigate the other influences of hot-carrier-effect immunity on device characteristics,the drift of gate and drain characteristics induced by differen t interface state is studied for grooved-gate and planar devices.It shows that t he drift induced by same interface state in grooved-gate MOSFET is far larger th an in planar device.This work lays a foundation for the research and design of n ovel very-small-size grooved gate CMOS devices.