Open AccessINFLUENCE OF INTERFACE BARRIERS ON CARRIERS RECOMBINATION IN ORGANIC BILAYER DEVICES AT HIGH ELECTRIC FIELD
Author(s) -
Yang Sheng-Yi,
Zhenjia Wang,
Xiaohong Chen,
Yanbing Hou,
Dong Jin-Feng,
Xurong Xu
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1627
Subject(s) - electric field , recombination , bilayer , quantum tunnelling , materials science , charge carrier , field (mathematics) , carrier lifetime , optoelectronics , chemical physics , condensed matter physics , engineering physics , physics , membrane , chemistry , silicon , mathematics , biochemistry , quantum mechanics , pure mathematics , gene
Based on the Fowler-Nordheim tunneling injection, a model for carriers transport and recombination in organic bilayer devices at high electric field is presented. The influences of applied bias and interface barriers on carriers recombination and its efficiency are calculated and discussed. The theory derived from this model reasonably elucidates the experimental phenomena, and it proves that the electric field can control the carriers recombination region.