Open AccessANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION
Author(s) -
Lv Yong-Liang,
Sizhong Zhou,
Deming Xu
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1394
Subject(s) - transconductance , materials science , heterojunction , transistor , optoelectronics , electron , electron mobility , space charge , voltage , depletion region , condensed matter physics , physics , semiconductor , quantum mechanics
We studied the dynamical behaviors of the depletion-mode AlGaAs/GaAs high-electr on-mobility transistor under optical illumination. The photovoltage effect and t he photogenerated carriers contribution to the space charge concentration were t aken into account. The pinch-off voltage, the sheet concentration of two-dimensi onal electron gas (2-DEG) located at the interface of the heterojunction, the I- V characteristic curve, and the transconductance were investigated by using the charge-controlling model. We found that the pinch-off voltage was lowered and th e sheet concentration of 2-DEG was increased because of the optical illumination , which, in turn, resulted in an increase in the current gain and the transcondu ctance of the device.