Open AccessPHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS SiOx(0<x<2)
Author(s) -
Liang Jian-Jun,
Yongqian Wang,
Chen Wei-De,
Zhanguo Wang,
Chang Yong
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1386
Subject(s) - photoluminescence , materials science , amorphous solid , erbium , doping , analytical chemistry (journal) , annealing (glass) , chemical vapor deposition , ion , optoelectronics , crystallography , chemistry , organic chemistry , chromatography , composite material
Hydrogenated amorphous SiOx films are fabricated via plasma enhanced chemical vapor deposition technique. After erbium implantation and rapid thermal annealing, photoluminescence (PL) are measured at 77K and room temperature (RT) , respectively. We observed the strong PL at 1.54μm at RT. The 1.54μm PL inten sity changes with the variation of concentration of oxygen. The most intense PL at 77K in a-SiOx∶H (Er) corresponds to O/Si=1.0 and at RT to O/Si=1. 76. Based on our results, we propose that Er ions contributed to PL come from O- rich region in the film. Er ions in Si-rich region have no relation with PL. Tem perature dependence of the intensity of the 1.54μm line of the Er3+ transition displays a very weak temperature quenching in Er-doped hydrogenated a morphous Si. The PL intensity at 250K is a little more one half of that at 15K.