PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS SiOx(0<x<2)

Hydrogenated amorphous SiOx films are fabricated via plasma enhanced chemical vapor deposition technique. After erbium implantation and rapid thermal annealing, photoluminescence (PL) are measured at 77K and room temperature (RT) , respectively. We observed the strong PL at 1.54μm at RT. The 1.54μm PL inten sity changes with the variation of concentration of oxygen. The most intense PL at 77K in a-SiOx∶H (Er) corresponds to O/Si=1.0 and at RT to O/Si=1. 76. Based on our results, we propose that Er ions contributed to PL come from O- rich region in the film. Er ions in Si-rich region have no relation with PL. Tem perature dependence of the intensity of the 1.54μm line of the Er3+ transition displays a very weak temperature quenching in Er-doped hydrogenated a morphous Si. The PL intensity at 250K is a little more one half of that at 15K.