TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR | Zendy

Wang Jian-ping | Zendy; XU NA-JUN | Zendy; ZHANG TING-QING | Zendy; Tang Hua-Lian | Zendy; Jialu Liu | Zendy; LIU CHUAN -YANG | Zendy; Yao Yu-Juan | Zendy; Peng Honglun | Zendy; He Baoping | Zendy; En Xia Zhang | Zendy

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TEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR

Author(s) -

Wang Jian-ping,

XU NA-JUN,

ZHANG TING-QING,

Tang Hua-Lian,

Jialu Liu,

LIU CHUAN -YANG,

Yao Yu-Juan,

Peng Honglun,

He Baoping,

En Xia Zhang

Publication year - 2000

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.49.1331

Subject(s) - irradiation , materials science , threshold voltage , annealing (glass) , semiconductor , oxide , optoelectronics , metal , voltage , electrical engineering , composite material , metallurgy , physics , transistor , nuclear physics , engineering

Effects of irradiation temperature are explored for metal-oxide-semiconductor de vice under γ-rays.Hardened CC4007 chips were irradiated under different tempera tures,gate bias and annealing conditions.Threshold voltage shift was divided int o Vot and Vit using mid-gap voltage method.Finally,the mec hanism of threshold shift was discussed.

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