Open AccessTEMPERATURE EFFECTS OF γ-IRRADIATED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRAN SISTOR
Author(s) -
Jianping Wang,
Xu Na-Jun,
Zhang Ting-Qing,
Tang Hua-Lian,
Jialu Liu,
Liu Chuan Yang,
Yao Yu-Juan,
Peng Honglun,
He Bao-Ping,
Zhengxuan Zhang
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1331
Subject(s) - irradiation , materials science , threshold voltage , annealing (glass) , semiconductor , oxide , optoelectronics , metal , voltage , electrical engineering , composite material , metallurgy , physics , transistor , nuclear physics , engineering
Effects of irradiation temperature are explored for metal-oxide-semiconductor de vice under γ-rays.Hardened CC4007 chips were irradiated under different tempera tures,gate bias and annealing conditions.Threshold voltage shift was divided int o Vot and Vit using mid-gap voltage method.Finally,the mec hanism of threshold shift was discussed.