STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR | Zendy

Hongxia Ren | Zendy; Hao Yue | Zendy; XU Dong-gang | Zendy

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STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

Author(s) -

Hongxia Ren,

Hao Yue,

XU Dong-gang

Publication year - 2000

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.49.1241

Subject(s) - materials science , mosfet , optoelectronics , field effect transistor , planar , gate oxide , short channel effect , transistor , semiconductor , hot carrier injection , electrical engineering , computer science , voltage , engineering , computer graphics (images)

In this paper,the hot-carrier effect in grooved gate NMOSFET and the device degr adation induced by it were simulated using device simulator MEDICI,and compared with those of counter conventional planar device.The hot-carrier effect and the device degradation were explained using the distribution of some internal physic al parameters.The simulation results indicated that hot-carrier effect was stron gly suppressed in grooved gate MOSFET,while grooved gate MOSFET's performance wa s sensitive to hot carrier.

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