Open AccessSTUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR
Author(s) -
Hang Ren,
Yue Hao,
Xu Dong-Gang
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1241
Subject(s) - materials science , mosfet , optoelectronics , field effect transistor , planar , gate oxide , short channel effect , transistor , semiconductor , hot carrier injection , electrical engineering , computer science , voltage , engineering , computer graphics (images)
In this paper,the hot-carrier effect in grooved gate NMOSFET and the device degr adation induced by it were simulated using device simulator MEDICI,and compared with those of counter conventional planar device.The hot-carrier effect and the device degradation were explained using the distribution of some internal physic al parameters.The simulation results indicated that hot-carrier effect was stron gly suppressed in grooved gate MOSFET,while grooved gate MOSFET's performance wa s sensitive to hot carrier.