Open AccessNEGATIVE RESISTANCE PHENOMENON AND LIGHT EMISSION PROPERTY OF THE METAL-INSULATOR-SEMICONDUCTOR (Au-SiO2-Si) TUNNEL JUNCTION
Author(s) -
Maoxiang Wang,
Jian Yu,
Sun Cheng-Xiu,
Zhaoqiang Wu
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1159
Subject(s) - materials science , quantum tunnelling , semiconductor , light emission , excitation , surface plasmon polariton , electron , insulator (electricity) , tunnel junction , surface plasmon , metal , optoelectronics , condensed matter physics , plasmon , physics , metallurgy , quantum mechanics
The Au-SiO2-Si thin film MIS(Metal-Insulator-Semiconductor)tunnel junction was fabricated.The light emission property and I-V characteristic of this junction were measured and analyzed.Result indicated that the light emission was due to the excitation of Surface Plasmon Polariton(SPP)and the couple of SPP with the surface roughness subsequently in the MIS system.We observed the negative resistance phenomenon(NRP) in the I-V curve of this MIS junction,which was explained by the electrons bonding model. We also got the AFM(atomic force microscopy)photo of the surface of MIS junction, by which the relation among the electrons tunneling, the excitation of SPP,and the light emission of the MIS junction was discussed.