ADMITTANCE SPECTROSCOPY AFFECTED BY SURFACE POTENTIAL IN QUANTUM WELL STRUCTURE | Zendy

GAO QI | Zendy; ZHANG SHEN-KUN | Zendy; Zuimin Jiang | Zendy; Fang Lü | Zendy

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ADMITTANCE SPECTROSCOPY AFFECTED BY SURFACE POTENTIAL IN QUANTUM WELL STRUCTURE

Author(s) -

GAO QI,

ZHANG SHEN-KUN,

Zuimin Jiang,

Fang Lü

Publication year - 2000

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.49.1136

Subject(s) - admittance , biasing , voltage , materials science , correctness , spectroscopy , electric potential , energy (signal processing) , quantum , optoelectronics , physics , computer science , quantum mechanics , electrical impedance , programming language

The activated energy of single quantum well structures obtained by the admittance measurements is varied with different thickness of capping layer and with one sample under different applied bias voltages.The electric potential distribution is the key effect on the energy variation.The correctness of the measured results can be judged by using the admittance measurements under different applied bias voltages

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