Open AccessADMITTANCE SPECTROSCOPY AFFECTED BY SURFACE POTENTIAL IN QUANTUM WELL STRUCTURE
Author(s) -
Qi Gao,
Zhang Shen-Kun,
Zuimin Jiang,
Lu Fang
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1136
Subject(s) - admittance , biasing , voltage , materials science , correctness , spectroscopy , electric potential , energy (signal processing) , quantum , optoelectronics , physics , computer science , quantum mechanics , electrical impedance , programming language
The activated energy of single quantum well structures obtained by the admittance measurements is varied with different thickness of capping layer and with one sample under different applied bias voltages.The electric potential distribution is the key effect on the energy variation.The correctness of the measured results can be judged by using the admittance measurements under different applied bias voltages