Open AccessEPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE
Author(s) -
Hongfei Liu,
Hong Chen,
Zhiqiang Li,
Wan Li,
Qi Huang,
Jian Zhou,
Yi Luo,
Han Ying-Jun
Publication year - 2000
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1132
Subject(s) - materials science , nucleation , molecular beam epitaxy , photoluminescence , hexagonal phase , hexagonal crystal system , layer (electronics) , diffraction , epitaxy , crystal (programming language) , phase (matter) , optoelectronics , crystallography , condensed matter physics , nanotechnology , optics , chemistry , programming language , physics , organic chemistry , computer science
GaN films of about 300nm were grown on GaAs(001) substrates by molecular beam epitaxy (MBE).X-ray double-crystal diffraction and room-temperature photoluminescence measurements show that the films grown on nitridized GaAs nucleation layer are pure cubic GaN while the films grown on nitridized AlAs nucleation layer are pure hexagonal GaN.The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different nucleation layers