Open AccessFABRICATION AND SPECTROSCOPIC STUDIES OF a-Si/SiO2 SUPERLATTICES
Author(s) -
Ningning Liu,
孙甲明 SUN Jia-ming,
PAN SHAO-HUA,
Zhenghao Chen,
Wang Rong-ping,
SHI WEN-SHENG,
Wang XiaoGuang
Publication year - 2000
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.49.1019
Subject(s) - materials science , superlattice , raman spectroscopy , amorphous solid , photoluminescence , transmission electron microscopy , absorption spectroscopy , absorption (acoustics) , sputter deposition , spectroscopy , optics , sputtering , optoelectronics , analytical chemistry (journal) , thin film , nanotechnology , crystallography , chemistry , physics , chromatography , quantum mechanics , composite material
Amorphous Si/SiO2 superlattices have been deposited on glass substrates using two-target alternation magnetron sputtering technique. The samples are characterized using transmission electron microscope and low-angle X-ray reflectance techniques. The results indicate that most of the regions in Si layers consist of amorphous phase in the superlattices, while the regular structure appears in some local regions rarely. The thicknesses of Si layers are in a range from 18 to 3.2nm and the thickness of SiO2 layer is 4.0nm in all cases. The samples are systematically studied using absorption, photoluminescence (PL) and Raman spectroscopy techniques. The absorption edge positions and PL peaks shift towards shorter wavelengths while Raman spectra show broader peaks with decreasing Si layer thickness. The results are mainly attributed to the quantum confinement effects.
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