INFLUENCE OF DEEP LEVELS ON THE PERFORMANCE OF AlGaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR | Zendy

Xinghong Zhang | Zendy; HU YU-SHENG | Zendy; WU JIE | Zendy; Zhiqun Cheng | Zendy; XIA GUAN-QUN | Zendy; Xu Yuan-sen | Zendy; Zhanghai Chen | Zendy; GUI YONG-SHENG | Zendy; CHU JUN-HAO | Zendy

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INFLUENCE OF DEEP LEVELS ON THE PERFORMANCE OF AlGaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR

Author(s) -

Xinghong Zhang,

HU YU-SHENG,

WU JIE,

Zhiqun Cheng,

XIA GUAN-QUN,

Xu Yuan-sen,

Zhanghai Chen,

GUI YONG-SHENG,

CHU JUN-HAO

Publication year - 1999

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.48.556

Subject(s) - heterojunction bipolar transistor , deep level transient spectroscopy , bipolar junction transistor , heterojunction , optoelectronics , common emitter , materials science , photoluminescence , transistor , silicon , physics , voltage , quantum mechanics

We have studied deep levels in AlGaInP emitter of AlGaInP/GaAs heterojunction bipolar transistor by deep-level transient spectroscopy and photoluminescence (PL) methods.Two deep levels were obtained with thermal activation energies of Ec-Et10.42eV and Ec-Et20.59eV,whose capture cross sections are 6.27×10-17cm2 and 6.49×10-20 cm2where Et1 and Et2 are Si-related and O-related deep levels,respectively. The relationship between excitation power and PL peak intensity have revealed that nonradiative recombination centers of deep levels exist in AlGaInP.The current gain of AlGaInP/GaAs HBT decreases due to the existence of deep levels in AlGaInP.

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