Open AccessINFLUENCE OF DEEP LEVELS ON THE PERFORMANCE OF AlGaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
Author(s) -
Xinghong Zhang,
Hu Yu-Sheng,
Jie Wu,
Zhiqun Cheng,
Xia Guanqun,
Yuanfan Xu,
Zhanghai Chen,
Gui Yong-Sheng,
Chu Jun-Hao
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.556
Subject(s) - heterojunction bipolar transistor , deep level transient spectroscopy , bipolar junction transistor , heterojunction , optoelectronics , common emitter , materials science , photoluminescence , transistor , silicon , physics , voltage , quantum mechanics
We have studied deep levels in AlGaInP emitter of AlGaInP/GaAs heterojunction bipolar transistor by deep-level transient spectroscopy and photoluminescence (PL) methods.Two deep levels were obtained with thermal activation energies of Ec-Et10.42eV and Ec-Et20.59eV,whose capture cross sections are 6.27×10-17cm2 and 6.49×10-20 cm2where Et1 and Et2 are Si-related and O-related deep levels,respectively. The relationship between excitation power and PL peak intensity have revealed that nonradiative recombination centers of deep levels exist in AlGaInP.The current gain of AlGaInP/GaAs HBT decreases due to the existence of deep levels in AlGaInP.