Open AccessSTUDY ON PLASMA ETCHING OF β-SiC THIN FILMS IN SF6 AND THE SF6+O2 MIXTURES
Author(s) -
Changchun Chai,
Yong Yang,
Yuejin Li,
Haiqiang Jia,
Ji Hui-Lian
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.550
Subject(s) - materials science , etching (microfabrication) , thin film , chemical vapor deposition , plasma , auger , yield (engineering) , analytical chemistry (journal) , composite material , nanotechnology , layer (electronics) , atomic physics , chemistry , physics , quantum mechanics , chromatography
Plasma etching(PE) of cubic β-SiC single crystalline thin films produced via chemical vapor deposition(CVD) has been performed in SF6 and the SF6+O2 mixtures. Experimental results show that the maxima of etching rate are reached when gas mixing ratio is about 40%. The Auger energy spectra indicate that PE process in SF6 and the SF6+O2 mixtures does not yield a residual SiC with a C-rich surface. This technique and experimental results may serve as the foundation of fabricating various devices of SiC.