Open AccessINTENSE ULTRAVIOLET PHOTOLUMINESCENCE AT ROOM TEMPERATURE IN AS-DEPOSITED Si∶H∶O FILMS
Author(s) -
Tong Su,
Liu Xiangna,
Ting Gao,
Hao Yin,
Yijun Chen,
Xiaoguang Bao
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.378
Subject(s) - photoluminescence , crystallite , materials science , ultraviolet , oxygen , chemical vapor deposition , analytical chemistry (journal) , deposition (geology) , plasma enhanced chemical vapor deposition , optoelectronics , chemistry , environmental chemistry , paleontology , organic chemistry , sediment , metallurgy , biology
Three photoluminescence (PL) bands at 340—370,400—430, and 740 nm were observed at room temperature in a-Si∶H∶O films fabricated by plasma enhanced chemical vapor deposition without any post-processing. The violet-blue emission is very strong and stable, and its intensity is closely related to the oxygen content in the films, which can be controlled by the applied dc biases on the sample substrates during deposition. The first two PL peaks are ascribed to oxygen-related colour centers in the a-Si∶H∶O matrix, and the last one is ascribed to the quantum size effect of the nanocrystallites embedded in a-Si∶H∶O matrix and the colour centers in the crystallites interfaces.