EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFET | Zendy

ZHANG TING-QING | Zendy; Jialu Liu | Zendy; Jianjun Li | Zendy; Wang Jian-ping | Zendy; En Xia Zhang | Zendy; XU NA-JUN | Zendy; Zhao Yuanfu | Zendy; HU YU-HONG | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

EFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFET

Author(s) -

ZHANG TING-QING,

Jialu Liu,

Jianjun Li,

Wang Jian-ping,

En Xia Zhang,

XU NA-JUN,

Zhao Yuanfu,

HU YU-HONG

Publication year - 1999

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.48.2299

Subject(s) - materials science , irradiation , threshold voltage , optoelectronics , mosfet , gate oxide , electrical engineering , voltage , transistor , physics , nuclear physics , engineering

The relation between the threshold voltage shift of BF+2 implanted Si-gate PMOSFET and the total γ-irradiation dose has been systematically studied,and the mechanism of γ-irradiation hardening for BF+2 implantation has also been analyzed in detail.The studies show that BF+2 implantation has a strong suppression for the threshold voltage shift of BF+2 implanted Si-gate PMOSFET under γ-irradiation;optimum BF+2 implantation dose in the hardened Si-Gate PMOSFET ranges from 5×1014—2×1015cm-2;F atoms distributed at SiO2/Si interface,which suppress the oxide-trap charges and interface-trap charges produced under γ-irradiation,may be the main origin of BF+2-implanted and hardened Si-gate PMOSFET.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research