Open AccessEFFECT OF BF+2 IMPLANTED IN HARDENED Si-GATE PMOSFET
Author(s) -
Zhang Ting-Qing,
Jialu Liu,
Jianjun Liu,
Jianping Wang,
Zhengxuan Zhang,
Xu Na-Jun,
Yuanfu Zhao,
Yuhong Hu
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.2299
Subject(s) - materials science , irradiation , threshold voltage , optoelectronics , mosfet , gate oxide , electrical engineering , voltage , transistor , physics , nuclear physics , engineering
The relation between the threshold voltage shift of BF+2 implanted Si-gate PMOSFET and the total γ-irradiation dose has been systematically studied,and the mechanism of γ-irradiation hardening for BF+2 implantation has also been analyzed in detail.The studies show that BF+2 implantation has a strong suppression for the threshold voltage shift of BF+2 implanted Si-gate PMOSFET under γ-irradiation;optimum BF+2 implantation dose in the hardened Si-Gate PMOSFET ranges from 5×1014—2×1015cm-2;F atoms distributed at SiO2/Si interface,which suppress the oxide-trap charges and interface-trap charges produced under γ-irradiation,may be the main origin of BF+2-implanted and hardened Si-gate PMOSFET.