Open AccessETCHING PROPERTIES OF AMORPHOUS HYDROGENATED CARBON FILMS IN A MULTIPOLE ELECTRON CYCLOTRON RESONANCE OXYGEN PLASMA SYSTEM
Author(s) -
Ning Zhao-Yuan,
Cheng Shan-Hua
Publication year - 1999
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.48.1950
Subject(s) - electron cyclotron resonance , materials science , amorphous carbon , carbon film , etching (microfabrication) , reactive ion etching , dry etching , plasma etching , amorphous solid , chemical vapor deposition , analytical chemistry (journal) , oxygen , plasma , thin film , composite material , nanotechnology , chemistry , organic chemistry , layer (electronics) , physics , quantum mechanics
The etching properties of amorphous hydrogenated carbon films deposited from benzene vapor in a multipole electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition system have been investigated.Etch rates of these carbon films as a function of the process variables,includ-ing gas pressure and microwave power were measured,and compared with other resist materials.The results show that the film has high etching resistance against oxygen,and etch rate of the film not only closely correlated with etching process parameters,but also with the deposition conditions.This film could be used as a resist in dry etching process.